VISHAY SISA18BDN-T1-GE3
25.61 ₺
25.61 ₺
+ VAT
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Mounting
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Type of transistor
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Kind of channel
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Gate-source voltage
In stock
6,000
pcs
04.12.2026
— estimated shipping date
3000 pcs per pack. Order only: 3000, 6000, 9000 …
Minimum order: 3000 pcs
Technical Specifications
| Drain-source voltage | 30V |
| Gate charge | 6.2nC |
| Manufacturer | VISHAY |
| On-state resistance | 6.83mΩ |
| Power dissipation | 36.8W |
| Technology | TrenchFET® |
| Mounting | SMD |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | -16...20V |