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VISHAY SIHB22N60E-GE3

357.30 ₺ 357.30 ₺
+ VAT
  • Kind of package
  • Mounting
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Gate-source voltage
Volume pricing
QtyUnit price (excl. VAT) USD (approx.)
1+ 357.30 ₺ $ 7.14
5+ 304.28 ₺ $ 6.08
10+ 237.38 ₺ $ 4.75
50+ 197.41 ₺ $ 3.95


In stock 240 pcs From abroad
04.12.2026 — estimated shipping date

Technical Specifications

CaseD2PAK
Drain current21A
Drain-source voltage600V
Gate charge86nC
ManufacturerVISHAY
On-state resistance0.18Ω
Power dissipation227W
Pulsed drain current56A

Kind of package reel
Mounting SMD
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhancement
Gate-source voltage ±30V