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VISHAY SIDR220EP-T1-RE3

171.31 ₺ 171.31 ₺
+ VAT
  • Mounting
  • Type of transistor
  • Kind of channel
  • Gate-source voltage
In stock 6,000 pcs From abroad
06.12.2026 — estimated shipping date
3000 pcs per pack. Order only: 3000, 6000, 9000 …

Minimum order: 3000 pcs

Technical Specifications

Drain current415A
Drain-source voltage25V
Gate charge200nC
ManufacturerVISHAY
TechnologyTrenchFET®

Mounting SMD
Type of transistor N-MOSFET
Kind of channel enhancement
Gate-source voltage -12...16V