VISHAY SI9407BDY-T1-GE3
116.94 ₺
116.94 ₺
+ VAT
-
Kind of package
-
Mounting
-
Polarisation
-
Type of transistor
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 116.66 ₺ | $ 2.32 |
| 10+ | 77.16 ₺ | $ 1.53 |
| 20+ | 67.64 ₺ | $ 1.35 |
| 50+ | 56.92 ₺ | $ 1.13 |
| 100+ | 50.07 ₺ | $ 1.00 |
| 500+ | 37.65 ₺ | $ 0.75 |
| 1000+ | 33.46 ₺ | $ 0.67 |
| 2500+ | 28.86 ₺ | $ 0.57 |
| 5000+ | 27.49 ₺ | $ 0.55 |
In stock
2,401
pcs
13.12.2026
— estimated shipping date
Technical Specifications
| Case | SO8 |
| Drain current | -2.6A |
| Drain-source voltage | -60V |
| Gate charge | 22nC |
| Manufacturer | VISHAY |
| On-state resistance | 0.12Ω |
| Power dissipation | 3.2W |
| Pulsed drain current | -20A |
| Technology | TrenchFET® |
| Kind of package | reel |
| Mounting | SMD |
| Polarisation | unipolar |
| Type of transistor | P-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |