VISHAY SI4447ADY-T1-GE3
66.83 ₺
66.83 ₺
+ VAT
-
Kind of package
-
Mounting
-
Polarisation
-
Type of transistor
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 66.68 ₺ | $ 1.33 |
| 10+ | 39.75 ₺ | $ 0.79 |
| 20+ | 35.47 ₺ | $ 0.71 |
| 100+ | 27.33 ₺ | $ 0.54 |
| 500+ | 21.45 ₺ | $ 0.43 |
| 1000+ | 20.72 ₺ | $ 0.41 |
In stock
43
pcs
13.12.2026
— estimated shipping date
Technical Specifications
| Case | SO8 |
| Drain current | -7.2A |
| Drain-source voltage | -40V |
| Gate charge | 38nC |
| Manufacturer | VISHAY |
| On-state resistance | 62mΩ |
| Power dissipation | 4.2W |
| Pulsed drain current | -20A |
| Technology | TrenchFET® |
| Kind of package | reel |
| Mounting | SMD |
| Polarisation | unipolar |
| Type of transistor | P-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |