VISHAY SI4435FDY-T1-GE3
51.40 ₺
51.40 ₺
+ VAT
-
Kind of package
-
Mounting
-
Polarisation
-
Type of transistor
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 51.28 ₺ | $ 1.02 |
| 10+ | 28.62 ₺ | $ 0.57 |
| 50+ | 22.41 ₺ | $ 0.45 |
| 100+ | 20.16 ₺ | $ 0.40 |
| 500+ | 15.56 ₺ | $ 0.31 |
| 2500+ | 13.79 ₺ | $ 0.27 |
In stock
37
pcs
12.12.2026
— estimated shipping date
Technical Specifications
| Case | SO8 |
| Drain current | -12.6A |
| Drain-source voltage | -30V |
| Gate charge | 28nC |
| Manufacturer | VISHAY |
| On-state resistance | 30mΩ |
| Power dissipation | 4.8W |
| Pulsed drain current | -32A |
| Technology | TrenchFET® |
| Kind of package | reel |
| Mounting | SMD |
| Polarisation | unipolar |
| Type of transistor | P-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |