VISHAY SI4435DDY-T1-GE3
79.85 ₺
79.85 ₺
+ VAT
-
Kind of package
-
Mounting
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Polarisation
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Type of transistor
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Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 79.66 ₺ | $ 1.58 |
| 10+ | 44.83 ₺ | $ 0.89 |
| 50+ | 35.56 ₺ | $ 0.71 |
| 100+ | 32.09 ₺ | $ 0.64 |
| 500+ | 25.07 ₺ | $ 0.50 |
| 1000+ | 22.41 ₺ | $ 0.45 |
| 2500+ | 21.12 ₺ | $ 0.42 |
In stock
3,387
pcs
13.12.2026
— estimated shipping date
Technical Specifications
| Case | SO8 |
| Drain current | -6.5A |
| Drain-source voltage | -30V |
| Gate charge | 50nC |
| Manufacturer | VISHAY |
| On-state resistance | 35mΩ |
| Power dissipation | 3.2W |
| Pulsed drain current | -50A |
| Technology | TrenchFET® |
| Kind of package | reel |
| Mounting | SMD |
| Polarisation | unipolar |
| Type of transistor | P-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |