VISHAY SI4134DY-T1-GE3
82.42 ₺
82.42 ₺
+ VAT
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Kind of package
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Mounting
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Polarisation
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Type of transistor
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Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 82.88 ₺ | $ 1.66 |
| 10+ | 46.25 ₺ | $ 0.92 |
| 50+ | 37.93 ₺ | $ 0.76 |
| 100+ | 34.51 ₺ | $ 0.69 |
| 500+ | 26.59 ₺ | $ 0.53 |
| 1000+ | 23.17 ₺ | $ 0.46 |
| 2500+ | 18.68 ₺ | $ 0.37 |
| 5000+ | 15.42 ₺ | $ 0.31 |
| 7500+ | 15.01 ₺ | $ 0.30 |
In stock
1,921
pcs
03.12.2026
— estimated shipping date
Technical Specifications
| Case | SO8 |
| Drain current | 11.2A |
| Drain-source voltage | 30V |
| Gate charge | 7.3nC |
| Manufacturer | VISHAY |
| On-state resistance | 14mΩ |
| Power dissipation | 3.2W |
| Technology | TrenchFET® |
| Kind of package | reel |
| Mounting | SMD |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |