VISHAY SI2319DS-T1-GE3
52.53 ₺
52.53 ₺
+ VAT
-
Kind of package
-
Mounting
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Polarisation
-
Type of transistor
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Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 52.41 ₺ | $ 1.04 |
| 10+ | 44.34 ₺ | $ 0.88 |
| 25+ | 34.59 ₺ | $ 0.69 |
| 100+ | 31.44 ₺ | $ 0.63 |
| 250+ | 27.49 ₺ | $ 0.55 |
| 500+ | 24.99 ₺ | $ 0.50 |
| 1000+ | 24.67 ₺ | $ 0.49 |
| 3000+ | 23.78 ₺ | $ 0.47 |
In stock
1,728
pcs
13.12.2026
— estimated shipping date
Technical Specifications
| Case | SOT23 |
| Drain current | -2.4A |
| Drain-source voltage | -40V |
| Gate charge | 17nC |
| Manufacturer | VISHAY |
| On-state resistance | 0.13Ω |
| Power dissipation | 0.8W |
| Pulsed drain current | -12A |
| Technology | TrenchFET® |
| Kind of package | reel |
| Mounting | SMD |
| Polarisation | unipolar |
| Type of transistor | P-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |