VISHAY SI2319DS-T1-E3
74.84 ₺
74.84 ₺
+ VAT
-
Kind of package
-
Mounting
-
Polarisation
-
Type of transistor
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 74.66 ₺ | $ 1.48 |
| 5+ | 43.70 ₺ | $ 0.87 |
| 25+ | 39.34 ₺ | $ 0.78 |
| 100+ | 34.75 ₺ | $ 0.69 |
| 500+ | 31.20 ₺ | $ 0.62 |
In stock
2,692
pcs
12.12.2026
— estimated shipping date
Technical Specifications
| Case | SOT23 |
| Drain current | -2.4A |
| Drain-source voltage | -40V |
| Gate charge | 17nC |
| Manufacturer | VISHAY |
| On-state resistance | 0.13Ω |
| Power dissipation | 0.8W |
| Pulsed drain current | -12A |
| Technology | TrenchFET® |
| Kind of package | reel |
| Mounting | SMD |
| Polarisation | unipolar |
| Type of transistor | P-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |