VISHAY SI2319DDS-T1-GE3
60.53 ₺
60.53 ₺
+ VAT
-
Kind of package
-
Mounting
-
Polarisation
-
Type of transistor
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 60.39 ₺ | $ 1.20 |
| 10+ | 33.54 ₺ | $ 0.67 |
| 100+ | 24.83 ₺ | $ 0.49 |
| 500+ | 19.59 ₺ | $ 0.39 |
| 1000+ | 17.25 ₺ | $ 0.34 |
| 3000+ | 13.87 ₺ | $ 0.28 |
| 6000+ | 13.06 ₺ | $ 0.26 |
In stock
361
pcs
12.12.2026
— estimated shipping date
Technical Specifications
| Case | SOT23 |
| Drain current | -3.6A |
| Drain-source voltage | -40V |
| Gate charge | 19nC |
| Manufacturer | VISHAY |
| On-state resistance | 0.1Ω |
| Power dissipation | 1.7W |
| Pulsed drain current | -15A |
| Technology | TrenchFET® |
| Kind of package | reel |
| Mounting | SMD |
| Polarisation | unipolar |
| Type of transistor | P-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |