VISHAY SI1062X-T1-GE3
26.20 ₺
26.20 ₺
+ VAT
-
Kind of package
-
Mounting
-
Polarisation
-
Type of transistor
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 26.35 ₺ | $ 0.53 |
| 10+ | 13.62 ₺ | $ 0.27 |
| 50+ | 11.01 ₺ | $ 0.22 |
| 100+ | 9.87 ₺ | $ 0.20 |
| 250+ | 8.40 ₺ | $ 0.17 |
| 500+ | 7.34 ₺ | $ 0.15 |
| 1000+ | 6.28 ₺ | $ 0.13 |
| 3000+ | 5.38 ₺ | $ 0.11 |
In stock
876
pcs
03.12.2026
— estimated shipping date
Technical Specifications
| Case | SC89 |
| Drain current | 0.53A |
| Drain-source voltage | 20V |
| Gate charge | 2.7nC |
| Manufacturer | VISHAY |
| On-state resistance | 762mΩ |
| Power dissipation | 0.22W |
| Pulsed drain current | 2A |
| Technology | TrenchFET® |
| Kind of package | reel |
| Mounting | SMD |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±8V |