VISHAY IRFBE20PBF
154.23 ₺
154.23 ₺
+ VAT
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Kind of package
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Mounting
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Polarisation
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Type of transistor
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Heatsink thickness
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Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 154.23 ₺ | $ 3.07 |
| 10+ | 108.77 ₺ | $ 2.17 |
| 50+ | 72.24 ₺ | $ 1.44 |
| 100+ | 65.75 ₺ | $ 1.31 |
| 500+ | 53.57 ₺ | $ 1.07 |
| 1000+ | 49.52 ₺ | $ 0.99 |
| 1250+ | 48.70 ₺ | $ 0.97 |
| 2000+ | 47.89 ₺ | $ 0.95 |
In stock
184
pcs
11.12.2026
— estimated shipping date
Technical Specifications
| Case | TO220AB |
| Drain current | 1.8A |
| Drain-source voltage | 800V |
| Gate charge | 38nC |
| Manufacturer | VISHAY |
| On-state resistance | 6.5Ω |
| Power dissipation | 54W |
| Pulsed drain current | 7.2A |
| Kind of package | tube |
| Mounting | THT |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Heatsink thickness | 1.14...1.4mm |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |