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TOSHIBA GT50JR22(STA1,E,S)

392.09 ₺ 392.09 ₺
+ VAT
  • Kind of package
  • Mounting
  • Type of transistor
  • Features of semiconductor devices
  • Gate-emitter voltage
Volume pricing
QtyUnit price (excl. VAT) USD (approx.)
1+ 390.47 ₺ $ 7.84
10+ 273.73 ₺ $ 5.50
25+ 244.75 ₺ $ 4.92


In stock 81 pcs From abroad
26.11.2026 — estimated shipping date

Technical Specifications

Teknik Özellikler

CaseTO3PN
Collector current44A
Collector-emitter voltage600V
ManufacturerTOSHIBA
Power dissipation115W
Pulsed collector current100A
Turn-off time330ns
Turn-on time250ns

Kind of package tube
Mounting THT
Type of transistor IGBT
Features of semiconductor devices integrated anti-parallel diode
Gate-emitter voltage ±25V