TOSHIBA GT50JR21(STA1,E,S)
330.65 ₺
330.65 ₺
+ VAT
-
Kind of package
-
Mounting
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Type of transistor
-
Features of semiconductor devices
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Gate-emitter voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 331.01 ₺ | $ 6.64 |
| 10+ | 236.32 ₺ | $ 4.74 |
| 25+ | 225.80 ₺ | $ 4.53 |
In stock
83
pcs
29.11.2026
— estimated shipping date
Technical Specifications
Teknik Özellikler
| Case | TO3PN |
| Collector current | 49A |
| Collector-emitter voltage | 600V |
| Manufacturer | TOSHIBA |
| Power dissipation | 230W |
| Pulsed collector current | 100A |
| Turn-off time | 720ns |
| Turn-on time | 430ns |
| Kind of package | tube |
| Mounting | THT |
| Type of transistor | IGBT |
| Features of semiconductor devices | integrated anti-parallel diode |
| Gate-emitter voltage | ±25V |