ROHM SEMICONDUCTOR VS4V5BU1QST18R
3.67 ₺
3.67 ₺
+ VAT
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Semiconductor structure
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Type of diode
-
Mounting
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Peak pulse power dissipation
-
Leakage current
-
Number of channels
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1235+ | 3.70 ₺ | $ 0.07 |
| 4000+ | 3.30 ₺ | $ 0.07 |
| 5000+ | 3.28 ₺ | $ 0.07 |
| 10000+ | 3.23 ₺ | $ 0.06 |
In stock
11,414
pcs
03.12.2026
— estimated shipping date
Minimum order: 1235 pcs
Technical Specifications
| Breakdown voltage | 5.3V |
| Capacitance | 0.12nF |
| Manufacturer | ROHM SEMICONDUCTOR |
| Max. forward impulse current | 50A |
| Max. off-state voltage | 4.5V |
| Operating temperature | -55...150°C |
| Semiconductor structure | bidirectional |
| Type of diode | TVS |
| Mounting | SMD |
| Peak pulse power dissipation | 0.6kW |
| Leakage current | 1µA |
| Number of channels | 1 |