ROHM SEMICONDUCTOR RS1E350BNTB1
66.89 ₺
66.89 ₺
+ VAT
-
Mounting
-
Type of transistor
-
Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 78+ | 66.54 ₺ | $ 1.33 |
| 100+ | 60.86 ₺ | $ 1.22 |
| 300+ | 56.80 ₺ | $ 1.13 |
| 500+ | 50.31 ₺ | $ 1.00 |
In stock
1,615
pcs
05.12.2026
— estimated shipping date
Minimum order: 78 pcs
Technical Specifications
| Case | HSOP8 |
| Drain-source voltage | 30V |
| Gate charge | 185nC |
| Manufacturer | ROHM SEMICONDUCTOR |
| On-state resistance | 1.7mΩ |
| Power dissipation | 35W |
| Mounting | SMD |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |