ROHM SEMICONDUCTOR RQ3E120BNTB
20.80 ₺
20.80 ₺
+ VAT
-
Mounting
-
Type of transistor
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 223+ | 20.69 ₺ | $ 0.41 |
| 300+ | 17.28 ₺ | $ 0.35 |
| 500+ | 16.55 ₺ | $ 0.33 |
| 1000+ | 16.07 ₺ | $ 0.32 |
| 4000+ | 15.66 ₺ | $ 0.31 |
In stock
4,747
pcs
06.12.2026
— estimated shipping date
Minimum order: 223 pcs
Technical Specifications
| Case | HSMT8 |
| Drain current | 12A |
| Drain-source voltage | 30V |
| Gate charge | 29nC |
| Manufacturer | ROHM SEMICONDUCTOR |
| On-state resistance | 9.3mΩ |
| Power dissipation | 2W |
| Mounting | SMD |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |