ROHM SEMICONDUCTOR RQ3E100BNTB
68.52 ₺
68.52 ₺
+ VAT
-
Kind of package
-
Mounting
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Polarisation
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Type of transistor
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Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 68.52 ₺ | $ 1.37 |
| 10+ | 37.93 ₺ | $ 0.76 |
| 50+ | 29.61 ₺ | $ 0.59 |
| 100+ | 26.59 ₺ | $ 0.53 |
| 500+ | 21.62 ₺ | $ 0.43 |
| 1000+ | 21.13 ₺ | $ 0.42 |
In stock
4
pcs
04.12.2026
— estimated shipping date
Technical Specifications
| Case | HSMT8 |
| Drain current | 21A |
| Drain-source voltage | 30V |
| Gate charge | 22nC |
| Manufacturer | ROHM SEMICONDUCTOR |
| On-state resistance | 15.3mΩ |
| Power dissipation | 15W |
| Pulsed drain current | 40A |
| Kind of package | reel |
| Mounting | SMD |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |