ROHM SEMICONDUCTOR RQ3E070BNTB1
20.96 ₺
20.96 ₺
+ VAT
-
Mounting
-
Type of transistor
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 222+ | 20.85 ₺ | $ 0.42 |
| 300+ | 17.36 ₺ | $ 0.35 |
| 500+ | 16.72 ₺ | $ 0.33 |
| 1000+ | 16.15 ₺ | $ 0.32 |
In stock
2,306
pcs
05.12.2026
— estimated shipping date
Minimum order: 222 pcs
Technical Specifications
| Case | HSMT8 |
| Drain-source voltage | 30V |
| Gate charge | 8.9nC |
| Manufacturer | ROHM SEMICONDUCTOR |
| On-state resistance | 27mΩ |
| Power dissipation | 13W |
| Mounting | SMD |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |