ROHM SEMICONDUCTOR RJ1N10BBHTL1
292.86 ₺
292.86 ₺
+ VAT
-
Mounting
-
Type of transistor
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 19+ | 292.82 ₺ | $ 5.85 |
| 30+ | 253.67 ₺ | $ 5.07 |
| 50+ | 246.33 ₺ | $ 4.92 |
| 100+ | 240.62 ₺ | $ 4.81 |
| 200+ | 213.70 ₺ | $ 4.27 |
In stock
820
pcs
04.12.2026
— estimated shipping date
Minimum order: 19 pcs
Technical Specifications
| Case | TO263AB |
| Drain current | 235A |
| Drain-source voltage | 80V |
| Gate charge | 185nC |
| Manufacturer | ROHM SEMICONDUCTOR |
| On-state resistance | 2mΩ |
| Power dissipation | 189W |
| Mounting | SMD |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |