ROHM SEMICONDUCTOR R6030JNZ4C13
646.13 ₺
646.13 ₺
+ VAT
-
Kind of package
-
Mounting
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Polarisation
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Type of transistor
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Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 646.13 ₺ | $ 12.86 |
| 5+ | 566.58 ₺ | $ 11.28 |
| 10+ | 526.81 ₺ | $ 10.49 |
| 30+ | 482.98 ₺ | $ 9.62 |
| 60+ | 448.88 ₺ | $ 8.94 |
| 120+ | 413.98 ₺ | $ 8.24 |
| 150+ | 405.05 ₺ | $ 8.06 |
| 300+ | 384.76 ₺ | $ 7.66 |
| 510+ | 372.58 ₺ | $ 7.42 |
In stock
522
pcs
11.12.2026
— estimated shipping date
Technical Specifications
| Case | TO247 |
| Drain current | 30A |
| Drain-source voltage | 600V |
| Gate charge | 74nC |
| Manufacturer | ROHM SEMICONDUCTOR |
| On-state resistance | 143mΩ |
| Power dissipation | 370W |
| Pulsed drain current | 90A |
| Kind of package | tube |
| Mounting | THT |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±30V |