IXYS IXTP2R4N120P
614.20 ₺
614.20 ₺
+ VAT
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Kind of package
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Mounting
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Polarisation
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Type of transistor
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Features of semiconductor devices
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Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 614.20 ₺ | $ 12.22 |
| 10+ | 383.88 ₺ | $ 7.64 |
| 50+ | 337.81 ₺ | $ 6.72 |
| 100+ | 318.42 ₺ | $ 6.34 |
| 250+ | 293.36 ₺ | $ 5.84 |
| 300+ | 288.51 ₺ | $ 5.74 |
| 500+ | 276.39 ₺ | $ 5.50 |
In stock
304
pcs
12.12.2026
— estimated shipping date
Technical Specifications
| Case | TO220AB |
| Drain current | 2.4A |
| Drain-source voltage | 1.2kV |
| Gate charge | 37nC |
| Manufacturer | IXYS |
| On-state resistance | 7.5Ω |
| Power dissipation | 125W |
| Pulsed drain current | 6A |
| Reverse recovery time | 920ns |
| Technology | Polar™ |
| Kind of package | tube |
| Mounting | THT |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Features of semiconductor devices | standard power mosfet |
| Kind of channel | enhancement |
| Gate-source voltage | ±30V |