IXYS IXFY4N85X
330.38 ₺
330.38 ₺
+ VAT
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Kind of package
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Mounting
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Polarisation
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Type of transistor
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Features of semiconductor devices
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Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 330.34 ₺ | $ 6.60 |
| 25+ | 254.49 ₺ | $ 5.08 |
| 70+ | 191.68 ₺ | $ 3.83 |
| 140+ | 158.24 ₺ | $ 3.16 |
| 560+ | 153.34 ₺ | $ 3.06 |
In stock
6
pcs
04.12.2026
— estimated shipping date
Technical Specifications
| Case | TO252 |
| Drain current | 3.5A |
| Drain-source voltage | 850V |
| Gate charge | 7nC |
| Manufacturer | IXYS |
| On-state resistance | 2.5Ω |
| Power dissipation | 150W |
| Pulsed drain current | 10A |
| Reverse recovery time | 170ns |
| Technology | HiPerFET™ |
| Kind of package | tube |
| Mounting | SMD |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Features of semiconductor devices | ultra junction x-class |
| Kind of channel | enhancement |
| Gate-source voltage | ±30V |