IXYS IXFT60N65X2HV
810.86 ₺
810.86 ₺
+ VAT
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Kind of package
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Mounting
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Polarisation
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Type of transistor
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Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 810.77 ₺ | $ 16.20 |
| 5+ | 765.09 ₺ | $ 15.29 |
| 10+ | 738.17 ₺ | $ 14.75 |
| 30+ | 703.91 ₺ | $ 14.06 |
| 60+ | 679.44 ₺ | $ 13.58 |
| 120+ | 655.79 ₺ | $ 13.10 |
| 150+ | 646.00 ₺ | $ 12.91 |
| 510+ | 623.16 ₺ | $ 12.45 |
In stock
26
pcs
04.12.2026
— estimated shipping date
Technical Specifications
| Case | TO268 |
| Drain current | 60A |
| Drain-source voltage | 650V |
| Gate charge | 108nC |
| Manufacturer | IXYS |
| On-state resistance | 52mΩ |
| Power dissipation | 780W |
| Reverse recovery time | 180ns |
| Technology | HiPerFET™ |
| Kind of package | tube |
| Mounting | SMD |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±30V |