IXYS IXFP12N65X2
396.93 ₺
396.93 ₺
+ VAT
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Kind of package
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Mounting
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Polarisation
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Type of transistor
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Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 395.19 ₺ | $ 7.86 |
| 10+ | 252.95 ₺ | $ 5.03 |
| 30+ | 226.29 ₺ | $ 4.50 |
| 50+ | 214.16 ₺ | $ 4.26 |
| 100+ | 198.81 ₺ | $ 3.96 |
| 250+ | 178.60 ₺ | $ 3.55 |
| 300+ | 174.56 ₺ | $ 3.47 |
| 500+ | 163.25 ₺ | $ 3.25 |
| 750+ | 155.17 ₺ | $ 3.09 |
In stock
213
pcs
11.12.2026
— estimated shipping date
Technical Specifications
| Case | TO220AB |
| Drain current | 12A |
| Drain-source voltage | 650V |
| Gate charge | 18.5nC |
| Manufacturer | IXYS |
| On-state resistance | 0.31Ω |
| Power dissipation | 180W |
| Reverse recovery time | 155ns |
| Technology | HiPerFET™ |
| Kind of package | tube |
| Mounting | THT |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±30V |