IXYS IXFN66N85X
4,291.42 ₺
4,291.42 ₺
+ VAT
-
Semiconductor structure
-
Polarisation
-
Mechanical mounting
-
Electrical mounting
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Type of semiconductor module
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 4,291.42 ₺ | $ 85.83 |
| 3+ | 3,796.57 ₺ | $ 75.93 |
| 10+ | 3,407.18 ₺ | $ 68.14 |
In stock
148
pcs
03.12.2026
— estimated shipping date
Technical Specifications
| Case | SOT227B |
| Drain current | 65A |
| Drain-source voltage | 850V |
| Gate charge | 230nC |
| Manufacturer | IXYS |
| On-state resistance | 65mΩ |
| Power dissipation | 830W |
| Pulsed drain current | 140A |
| Reverse recovery time | 250ns |
| Technology | HiPerFET™ |
| Semiconductor structure | single transistor |
| Polarisation | unipolar |
| Mechanical mounting | screw |
| Electrical mounting | screw |
| Type of semiconductor module | MOSFET transistor |
| Kind of channel | enhancement |
| Gate-source voltage | ±40V |