IXYS IXFN60N80P
3,217.58 ₺
3,217.58 ₺
+ VAT
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Semiconductor structure
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Polarisation
-
Mechanical mounting
-
Electrical mounting
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Type of semiconductor module
-
Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 3,221.10 ₺ | $ 64.60 |
| 2+ | 3,099.70 ₺ | $ 62.16 |
| 3+ | 2,986.40 ₺ | $ 59.89 |
| 5+ | 2,942.69 ₺ | $ 59.01 |
In stock
294
pcs
28.11.2026
— estimated shipping date
Technical Specifications
Teknik Özellikler
| Case | SOT227B |
| Drain current | 53A |
| Drain-source voltage | 800V |
| Gate charge | 250nC |
| Manufacturer | IXYS |
| On-state resistance | 0.14Ω |
| Power dissipation | 1.04kW |
| Pulsed drain current | 150A |
| Reverse recovery time | 250ns |
| Technology | HiPerFET™ |
| Semiconductor structure | single transistor |
| Polarisation | unipolar |
| Mechanical mounting | screw |
| Electrical mounting | screw |
| Type of semiconductor module | MOSFET transistor |
| Kind of channel | enhancement |
| Gate-source voltage | ±30V |