IXYS IXFN40N110Q3
1,658.10 ₺
1,658.10 ₺
+ VAT
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Semiconductor structure
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Polarisation
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Mechanical mounting
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Electrical mounting
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Type of semiconductor module
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Kind of channel
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Gate-source voltage
In stock
2
pcs
28.11.2026
— estimated shipping date
Technical Specifications
Teknik Özellikler
| Case | SOT227B |
| Drain current | 35A |
| Drain-source voltage | 1.1kV |
| Gate charge | 300nC |
| Manufacturer | IXYS |
| On-state resistance | 0.26Ω |
| Power dissipation | 960W |
| Pulsed drain current | 100A |
| Reverse recovery time | 434ns |
| Technology | HiPerFET™ |
| Semiconductor structure | single transistor |
| Polarisation | unipolar |
| Mechanical mounting | screw |
| Electrical mounting | screw |
| Type of semiconductor module | MOSFET transistor |
| Kind of channel | enhancement |
| Gate-source voltage | ±40V |