IXYS IXFN40N110P
1,835.96 ₺
1,835.96 ₺
+ VAT
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Semiconductor structure
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Polarisation
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Mechanical mounting
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Electrical mounting
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Type of semiconductor module
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Kind of channel
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Gate-source voltage
In stock
1
pcs
28.11.2026
— estimated shipping date
Technical Specifications
Teknik Özellikler
| Case | SOT227B |
| Drain current | 34A |
| Drain-source voltage | 1.1kV |
| Gate charge | 310nC |
| Manufacturer | IXYS |
| On-state resistance | 0.26Ω |
| Power dissipation | 890W |
| Pulsed drain current | 100A |
| Reverse recovery time | 300ns |
| Technology | HiPerFET™ |
| Semiconductor structure | single transistor |
| Polarisation | unipolar |
| Mechanical mounting | screw |
| Electrical mounting | screw |
| Type of semiconductor module | MOSFET transistor |
| Kind of channel | enhancement |
| Gate-source voltage | ±40V |