IXYS IXFN360N10T
2,076.87 ₺
2,076.87 ₺
+ VAT
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Semiconductor structure
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Polarisation
-
Mechanical mounting
-
Electrical mounting
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Type of semiconductor module
-
Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 2,079.15 ₺ | $ 41.70 |
| 5+ | 1,951.27 ₺ | $ 39.13 |
| 10+ | 1,753.80 ₺ | $ 35.17 |
In stock
229
pcs
28.11.2026
— estimated shipping date
Technical Specifications
Teknik Özellikler
| Case | SOT227B |
| Drain current | 360A |
| Drain-source voltage | 100V |
| Gate charge | 525nC |
| Manufacturer | IXYS |
| On-state resistance | 2.6mΩ |
| Power dissipation | 830W |
| Pulsed drain current | 900A |
| Reverse recovery time | 130ns |
| Technology | GigaMOS™ |
| Semiconductor structure | single transistor |
| Polarisation | unipolar |
| Mechanical mounting | screw |
| Electrical mounting | screw |
| Type of semiconductor module | MOSFET transistor |
| Kind of channel | enhancement |
| Gate-source voltage | ±30V |