IXYS IXFN26N120P
3,026.78 ₺
3,026.78 ₺
+ VAT
-
Semiconductor structure
-
Polarisation
-
Mechanical mounting
-
Electrical mounting
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Type of semiconductor module
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 3,014.29 ₺ | $ 60.54 |
| 3+ | 2,661.66 ₺ | $ 53.46 |
| 10+ | 2,391.15 ₺ | $ 48.03 |
In stock
7
pcs
27.11.2026
— estimated shipping date
Technical Specifications
Teknik Özellikler
| Case | SOT227B |
| Drain current | 23A |
| Drain-source voltage | 1.2kV |
| Gate charge | 255nC |
| Manufacturer | IXYS |
| On-state resistance | 0.5Ω |
| Power dissipation | 695W |
| Pulsed drain current | 60A |
| Reverse recovery time | 300ns |
| Technology | HiPerFET™ |
| Semiconductor structure | single transistor |
| Polarisation | unipolar |
| Mechanical mounting | screw |
| Electrical mounting | screw |
| Type of semiconductor module | MOSFET transistor |
| Kind of channel | enhancement |
| Gate-source voltage | ±40V |