IXYS IXFN26N100P
2,934.62 ₺
2,934.62 ₺
+ VAT
-
Semiconductor structure
-
Polarisation
-
Mechanical mounting
-
Electrical mounting
-
Type of semiconductor module
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 2,922.51 ₺ | $ 58.70 |
| 3+ | 2,579.54 ₺ | $ 51.81 |
| 10+ | 2,318.69 ₺ | $ 46.57 |
In stock
6
pcs
27.11.2026
— estimated shipping date
Technical Specifications
Teknik Özellikler
| Case | SOT227B |
| Drain current | 23A |
| Drain-source voltage | 1kV |
| Gate charge | 197nC |
| Manufacturer | IXYS |
| On-state resistance | 390mΩ |
| Power dissipation | 595W |
| Pulsed drain current | 65A |
| Reverse recovery time | 300ns |
| Technology | HiPerFET™ |
| Semiconductor structure | single transistor |
| Polarisation | unipolar |
| Mechanical mounting | screw |
| Electrical mounting | screw |
| Type of semiconductor module | MOSFET transistor |
| Kind of channel | enhancement |
| Gate-source voltage | ±40V |