IXYS IXFN210N30X3
3,649.28 ₺
3,649.28 ₺
+ VAT
-
Semiconductor structure
-
Polarisation
-
Mechanical mounting
-
Electrical mounting
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Type of semiconductor module
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 3,653.28 ₺ | $ 73.26 |
| 3+ | 3,408.86 ₺ | $ 68.36 |
| 5+ | 3,306.89 ₺ | $ 66.32 |
| 10+ | 3,215.44 ₺ | $ 64.48 |
In stock
7
pcs
28.11.2026
— estimated shipping date
Technical Specifications
Teknik Özellikler
| Case | SOT227B |
| Drain current | 210A |
| Drain-source voltage | 300V |
| Gate charge | 375nC |
| Manufacturer | IXYS |
| On-state resistance | 4.6mΩ |
| Power dissipation | 695W |
| Pulsed drain current | 650A |
| Reverse recovery time | 190ns |
| Technology | HiPerFET™ |
| Semiconductor structure | single transistor |
| Polarisation | unipolar |
| Mechanical mounting | screw |
| Electrical mounting | screw |
| Type of semiconductor module | MOSFET transistor |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |