IXYS IXFN210N20P
3,542.57 ₺
3,542.57 ₺
+ VAT
-
Semiconductor structure
-
Polarisation
-
Mechanical mounting
-
Electrical mounting
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Type of semiconductor module
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 3,527.95 ₺ | $ 70.86 |
| 10+ | 2,807.38 ₺ | $ 56.39 |
| 50+ | 2,490.17 ₺ | $ 50.01 |
In stock
121
pcs
28.11.2026
— estimated shipping date
Technical Specifications
Teknik Özellikler
| Case | SOT227B |
| Drain current | 188A |
| Drain-source voltage | 200V |
| Gate charge | 255nC |
| Manufacturer | IXYS |
| On-state resistance | 10.5mΩ |
| Power dissipation | 1.07kW |
| Pulsed drain current | 600A |
| Reverse recovery time | 200ns |
| Technology | HiPerFET™ |
| Semiconductor structure | single transistor |
| Polarisation | unipolar |
| Mechanical mounting | screw |
| Electrical mounting | screw |
| Type of semiconductor module | MOSFET transistor |
| Kind of channel | enhancement |
| Gate-source voltage | ±30V |