IXYS IXFN20N120P
1,118.88 ₺
1,118.88 ₺
+ VAT
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Semiconductor structure
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Polarisation
-
Mechanical mounting
-
Electrical mounting
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Type of semiconductor module
-
Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 1,114.26 ₺ | $ 22.38 |
| 3+ | 1,062.73 ₺ | $ 21.34 |
| 10+ | 1,060.32 ₺ | $ 21.30 |
In stock
7
pcs
28.11.2026
— estimated shipping date
Technical Specifications
Teknik Özellikler
| Case | SOT227B |
| Drain current | 20A |
| Drain-source voltage | 1.2kV |
| Gate charge | 193nC |
| Manufacturer | IXYS |
| On-state resistance | 570mΩ |
| Power dissipation | 595W |
| Pulsed drain current | 50A |
| Reverse recovery time | 300ns |
| Technology | HiPerFET™ |
| Semiconductor structure | single transistor |
| Polarisation | unipolar |
| Mechanical mounting | screw |
| Electrical mounting | screw |
| Type of semiconductor module | MOSFET transistor |
| Kind of channel | enhancement |
| Gate-source voltage | ±40V |