IXYS IXFN180N25T
2,390.55 ₺
2,390.55 ₺
+ VAT
-
Semiconductor structure
-
Polarisation
-
Mechanical mounting
-
Electrical mounting
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Type of semiconductor module
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 2,393.16 ₺ | $ 47.99 |
| 5+ | 2,048.39 ₺ | $ 41.08 |
| 10+ | 1,842.02 ₺ | $ 36.94 |
| 20+ | 1,672.87 ₺ | $ 33.55 |
| 50+ | 1,554.71 ₺ | $ 31.18 |
In stock
22
pcs
28.11.2026
— estimated shipping date
Technical Specifications
Teknik Özellikler
| Case | SOT227B |
| Drain current | 168A |
| Drain-source voltage | 250V |
| Gate charge | 364nC |
| Manufacturer | IXYS |
| On-state resistance | 12.9mΩ |
| Power dissipation | 900W |
| Pulsed drain current | 500A |
| Reverse recovery time | 200ns |
| Technology | GigaMOS™ |
| Semiconductor structure | single transistor |
| Polarisation | unipolar |
| Mechanical mounting | screw |
| Electrical mounting | screw |
| Type of semiconductor module | MOSFET transistor |
| Kind of channel | enhancement |
| Gate-source voltage | ±30V |