IXYS IXFN100N50P
3,625.84 ₺
3,625.84 ₺
+ VAT
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Semiconductor structure
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Polarisation
-
Mechanical mounting
-
Electrical mounting
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Type of semiconductor module
-
Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 3,610.87 ₺ | $ 72.52 |
| 10+ | 2,933.78 ₺ | $ 58.92 |
| 20+ | 2,831.53 ₺ | $ 56.87 |
In stock
225
pcs
28.11.2026
— estimated shipping date
Technical Specifications
Teknik Özellikler
| Case | SOT227B |
| Drain current | 75A |
| Drain-source voltage | 500V |
| Gate charge | 240nC |
| Manufacturer | IXYS |
| On-state resistance | 49mΩ |
| Power dissipation | 1.04kW |
| Pulsed drain current | 250A |
| Reverse recovery time | 200ns |
| Technology | HiPerFET™ |
| Semiconductor structure | single transistor |
| Polarisation | unipolar |
| Mechanical mounting | screw |
| Electrical mounting | screw |
| Type of semiconductor module | MOSFET transistor |
| Kind of channel | enhancement |
| Gate-source voltage | ±30V |