IXYS IXFJ20N85X
921.80 ₺
921.80 ₺
+ VAT
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Kind of package
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Mounting
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Polarisation
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Type of transistor
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Features of semiconductor devices
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Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 916.92 ₺ | $ 18.31 |
| 3+ | 819.55 ₺ | $ 16.37 |
| 10+ | 726.23 ₺ | $ 14.50 |
| 30+ | 652.39 ₺ | $ 13.03 |
In stock
5
pcs
06.12.2026
— estimated shipping date
Technical Specifications
| Case | ISO247™ |
| Drain current | 9.5A |
| Drain-source voltage | 850V |
| Gate charge | 63nC |
| Manufacturer | IXYS |
| On-state resistance | 0.36Ω |
| Power dissipation | 110W |
| Pulsed drain current | 50A |
| Reverse recovery time | 190ns |
| Technology | HiPerFET™ |
| Kind of package | tube |
| Mounting | THT |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Features of semiconductor devices | ultra junction x-class |
| Kind of channel | enhancement |
| Gate-source voltage | ±30V |