IXYS IXFH80N65X2
1,181.45 ₺
1,181.45 ₺
+ VAT
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Kind of package
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Mounting
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Polarisation
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Type of transistor
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Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 1,181.45 ₺ | $ 23.59 |
| 5+ | 1,037.01 ₺ | $ 20.71 |
| 10+ | 956.68 ₺ | $ 19.11 |
| 30+ | 843.08 ₺ | $ 16.84 |
| 60+ | 785.47 ₺ | $ 15.69 |
| 90+ | 763.56 ₺ | $ 15.25 |
| 120+ | 755.44 ₺ | $ 15.09 |
| 150+ | 751.39 ₺ | $ 15.01 |
In stock
5
pcs
08.12.2026
— estimated shipping date
Technical Specifications
| Case | TO247-3 |
| Drain current | 80A |
| Drain-source voltage | 650V |
| Gate charge | 0.14µC |
| Manufacturer | IXYS |
| On-state resistance | 38mΩ |
| Power dissipation | 890W |
| Reverse recovery time | 200ns |
| Technology | HiPerFET™ |
| Kind of package | tube |
| Mounting | THT |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±30V |