IXYS IXFA7N100P
602.03 ₺
602.03 ₺
+ VAT
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Kind of package
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Mounting
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Polarisation
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Type of transistor
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Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 601.96 ₺ | $ 12.03 |
| 5+ | 482.05 ₺ | $ 9.63 |
| 10+ | 425.77 ₺ | $ 8.51 |
| 25+ | 363.78 ₺ | $ 7.27 |
| 30+ | 354.00 ₺ | $ 7.07 |
| 50+ | 329.53 ₺ | $ 6.58 |
| 100+ | 305.06 ₺ | $ 6.10 |
| 250+ | 283.85 ₺ | $ 5.67 |
| 500+ | 272.43 ₺ | $ 5.44 |
In stock
132
pcs
04.12.2026
— estimated shipping date
Technical Specifications
| Case | TO263 |
| Drain current | 7A |
| Drain-source voltage | 1kV |
| Gate charge | 47nC |
| Manufacturer | IXYS |
| On-state resistance | 1.9Ω |
| Power dissipation | 300W |
| Reverse recovery time | 300ns |
| Technology | HiPerFET™ |
| Kind of package | tube |
| Mounting | SMD |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±30V |