IXYS IXBX75N170A
1,906.29 ₺
1,906.29 ₺
+ VAT
-
Kind of package
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Mounting
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Type of transistor
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Features of semiconductor devices
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Gate-emitter voltage
In stock
7
pcs
28.11.2026
— estimated shipping date
Technical Specifications
Teknik Özellikler
| Case | PLUS247™ |
| Collector current | 65A |
| Collector-emitter voltage | 1.7kV |
| Gate charge | 358nC |
| Manufacturer | IXYS |
| Power dissipation | 1.04kW |
| Pulsed collector current | 300A |
| Technology | BiMOSFET™ |
| Turn-off time | 595ns |
| Turn-on time | 65ns |
| Kind of package | tube |
| Mounting | THT |
| Type of transistor | IGBT |
| Features of semiconductor devices | high voltage |
| Gate-emitter voltage | ±20V |