IXYS IXBT10N170
599.50 ₺
599.50 ₺
+ VAT
-
Kind of package
-
Mounting
-
Type of transistor
-
Features of semiconductor devices
-
Gate-emitter voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 599.50 ₺ | $ 11.99 |
| 3+ | 538.66 ₺ | $ 10.77 |
| 10+ | 502.15 ₺ | $ 10.04 |
| 30+ | 485.12 ₺ | $ 9.70 |
In stock
27
pcs
03.12.2026
— estimated shipping date
Technical Specifications
| Case | TO268 |
| Collector current | 10A |
| Collector-emitter voltage | 1.7kV |
| Gate charge | 30nC |
| Manufacturer | IXYS |
| Power dissipation | 140W |
| Pulsed collector current | 40A |
| Technology | BiMOSFET™ |
| Turn-off time | 1.8µs |
| Turn-on time | 63ns |
| Kind of package | tube |
| Mounting | SMD |
| Type of transistor | IGBT |
| Features of semiconductor devices | high voltage |
| Gate-emitter voltage | ±20V |