INFINEON TECHNOLOGIES IRFB4229PBF
203.94 ₺
203.94 ₺
+ VAT
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Kind of package
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Mounting
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Polarisation
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Type of transistor
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Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 202.86 ₺ | $ 4.05 |
| 50+ | 150.93 ₺ | $ 3.01 |
| 100+ | 141.19 ₺ | $ 2.82 |
| 200+ | 129.83 ₺ | $ 2.59 |
| 500+ | 114.41 ₺ | $ 2.28 |
| 1000+ | 104.67 ₺ | $ 2.09 |
| 2000+ | 96.56 ₺ | $ 1.93 |
| 3000+ | 92.50 ₺ | $ 1.85 |
| 5000+ | 88.45 ₺ | $ 1.77 |
| 6000+ | 87.63 ₺ | $ 1.75 |
In stock
580
pcs
06.12.2026
— estimated shipping date
Technical Specifications
| Case | TO220AB |
| Drain current | 46A |
| Drain-source voltage | 250V |
| Gate charge | 72nC |
| Manufacturer | INFINEON TECHNOLOGIES |
| On-state resistance | 46mΩ |
| Power dissipation | 330W |
| Technology | HEXFET® |
| Kind of package | tube |
| Mounting | THT |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±30V |