INFINEON TECHNOLOGIES IRF1010EPBF
123.99 ₺
123.99 ₺
+ VAT
-
Kind of package
-
Mounting
-
Polarisation
-
Type of transistor
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 123.34 ₺ | $ 2.46 |
| 10+ | 74.16 ₺ | $ 1.48 |
| 50+ | 60.70 ₺ | $ 1.21 |
| 100+ | 55.02 ₺ | $ 1.10 |
| 250+ | 47.96 ₺ | $ 0.96 |
| 500+ | 43.01 ₺ | $ 0.86 |
| 1000+ | 39.35 ₺ | $ 0.79 |
| 2000+ | 38.22 ₺ | $ 0.76 |
In stock
428
pcs
06.12.2026
— estimated shipping date
Technical Specifications
| Case | TO220AB |
| Drain current | 81A |
| Drain-source voltage | 60V |
| Gate charge | 86.6nC |
| Manufacturer | INFINEON TECHNOLOGIES |
| On-state resistance | 12mΩ |
| Power dissipation | 170W |
| Technology | HEXFET® |
| Kind of package | tube |
| Mounting | THT |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |