INFINEON TECHNOLOGIES IPB039N10N3 G
214.54 ₺
214.54 ₺
+ VAT
-
Mounting
-
Type of transistor
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 25+ | 213.41 ₺ | $ 4.26 |
| 30+ | 175.27 ₺ | $ 3.50 |
| 50+ | 167.16 ₺ | $ 3.34 |
| 100+ | 161.48 ₺ | $ 3.22 |
In stock
281
pcs
05.12.2026
— estimated shipping date
Minimum order: 25 pcs
Technical Specifications
| Application | automotive industry |
| Case | TO263-7 |
| Drain current | 160A |
| Drain-source voltage | 100V |
| Gate charge | 88nC |
| Manufacturer | INFINEON TECHNOLOGIES |
| On-state resistance | 3.9mΩ |
| Power dissipation | 214W |
| Pulsed drain current | 640A |
| Technology | OptiMOS™ |
| Mounting | SMD |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |