INFINEON TECHNOLOGIES BSZ097N04LS G
36.63 ₺
36.63 ₺
+ VAT
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Semiconductor structure
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Mounting
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Type of transistor
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Kind of channel
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Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 114+ | 36.43 ₺ | $ 0.73 |
| 300+ | 33.27 ₺ | $ 0.66 |
| 500+ | 32.70 ₺ | $ 0.65 |
| 1000+ | 29.05 ₺ | $ 0.58 |
In stock
2,788
pcs
05.12.2026
— estimated shipping date
Minimum order: 114 pcs
Technical Specifications
| Drain-source voltage | 40V |
| Gate charge | 18nC |
| Manufacturer | INFINEON TECHNOLOGIES |
| Power dissipation | 35W |
| Pulsed drain current | 160A |
| Technology | OptiMOS™ 3 |
| Semiconductor structure | single transistor |
| Mounting | SMD |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |