GOFORD SEMICONDUCTOR GT1K2N10I
62.61 ₺
62.61 ₺
+ VAT
-
Mounting
-
Polarisation
-
Type of transistor
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 62.96 ₺ | $ 1.26 |
| 10+ | 45.31 ₺ | $ 0.91 |
| 25+ | 24.28 ₺ | $ 0.49 |
| 100+ | 10.48 ₺ | $ 0.21 |
| 500+ | 6.29 ₺ | $ 0.13 |
| 1000+ | 5.44 ₺ | $ 0.11 |
| 3000+ | 4.64 ₺ | $ 0.09 |
| 9000+ | 4.25 ₺ | $ 0.08 |
In stock
3,000
pcs
04.12.2026
— estimated shipping date
Technical Specifications
| Case | SOT23 |
| Drain current | 3.3A |
| Drain-source voltage | 100V |
| Gate charge | 4.2nC |
| Manufacturer | GOFORD SEMICONDUCTOR |
| Power dissipation | 1.6W |
| Technology | SGT |
| Mounting | SMD |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |