GOFORD SEMICONDUCTOR G080P06M
134.96 ₺
134.96 ₺
+ VAT
-
Mounting
-
Polarisation
-
Type of transistor
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 134.64 ₺ | $ 2.68 |
| 10+ | 121.74 ₺ | $ 2.42 |
| 25+ | 108.04 ₺ | $ 2.15 |
| 100+ | 95.94 ₺ | $ 1.91 |
| 400+ | 92.72 ₺ | $ 1.84 |
| 800+ | 86.27 ₺ | $ 1.72 |
| 1600+ | 83.04 ₺ | $ 1.65 |
In stock
800
pcs
13.12.2026
— estimated shipping date
Technical Specifications
| Case | TO263 |
| Drain current | -195A |
| Drain-source voltage | -60V |
| Gate charge | 186nC |
| Manufacturer | GOFORD SEMICONDUCTOR |
| Power dissipation | 294W |
| Technology | Trench |
| Mounting | SMD |
| Polarisation | unipolar |
| Type of transistor | P-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |