GOFORD SEMICONDUCTOR G080N10T
127.74 ₺
127.74 ₺
+ VAT
-
Mounting
-
Polarisation
-
Type of transistor
-
Kind of channel
-
Gate-source voltage
Volume pricing
| Qty | Unit price (excl. VAT) | USD (approx.) |
|---|---|---|
| 1+ | 127.74 ₺ | $ 2.55 |
| 10+ | 115.54 ₺ | $ 2.30 |
| 100+ | 101.71 ₺ | $ 2.03 |
| 250+ | 91.94 ₺ | $ 1.83 |
| 500+ | 88.69 ₺ | $ 1.77 |
In stock
559
pcs
08.12.2026
— estimated shipping date
Technical Specifications
| Case | TO220 |
| Drain current | 140A |
| Drain-source voltage | 100V |
| Gate charge | 192nC |
| Manufacturer | GOFORD SEMICONDUCTOR |
| Power dissipation | 236W |
| Technology | Trench |
| Mounting | THT |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhancement |
| Gate-source voltage | ±20V |